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Gallium nitride (GaN) is a material that is used for radioand satellite communications in civil and military applications and insolid-state lighting such as LED bulbs. Researchers are also exploring GaN foruse in high power applications such as power grids and electric vehicles. Themarket for GaN power devices is expected to reach $2.6 billion dollars by 2022.However, GaN is not an earth abundant material and only recently, smalldiameter GaN substrates have started to become available. Researchers have beengrowing GaN on foreign substrates for almost 5 decades, but the quality of thegrown materials is compromised, especially on the standard microelectronicssubstrate, silicon (Si), which is over 1000 times cheaper than GaN substrates.The origin of the problem is a classical one: high quality material depositionis usually carried out near 1,000 degrees Celsius, but when dissimilarmaterials are cooled down to room temperature, their contraction can bedisproportionate, resulting in the formation of cracks and material failure.This is exactly what happens when GaN is grown on Si. And because the crackseverity depends on the thickness of the layers, the thickest pure andsemiconductive GaN layer that can be grown on Si is 4.5 micrometers thick — toothin to provide good use of GaN for high power (kilovolt-scale) applicationswhich require much thicker layers (10 microns or more).

crack-free GaN on Si(19 μm thick at center).

Now researchers at the Integrated Electronicsand Biointerfaces Group at UC San Diego led by electrical engineering professorShadi Dayeh have solved this classical problem of thermal mismatches in the growthof dissimilar materials. In an article published on Aug. 21 in Advanced Materials, they combined fundamentalcrystal properties of GaN and geometrical effects to deflect strain from thecrystal planes that usually crack under stress to the surface facets that canfreely expand and contract in response to stress. By doing so, they were ableto grow crack-free 19-micron-thick layers of GaN on Si — thicker than what’s neededfor high-power applications. In the resulting structures, both GaN and Si hadexposed surfaces to enable them to move, twist or “tango” together withoutcracking despite their thermal mismatch.

Electrical engineering professor Shadi Dayeh (left) and

near the GaN MOCVD facility in the Qualcomm Institute

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Thick layers also allowed the crystal defects —threading dislocations — to reduce from commonly achieved 10⁸ – 10⁹per centimeter squared on Si to 10⁷. And with the high materialquality, Dayeh and his team demonstrated the first vertical GaN switches on Si.“This is the result of nearly four years of diligent efforts by graduatestudent Atsunori Tanaka, who learned and quickly excelled in the GaN metalorganic chemical vapor deposition here at UC San Diego,” said Dayeh. “Ourgraduate students go through a full cycle of rigorous training in all aspectsin electronic materials and devices and areprepared to tackle the greatest challenges in this area. A group of verytalented students including Atsunori Tanaka, Woojin Choi, who fabricated thevertical switches, and Renjie Chen, who did the electron microscopy, haveteamed up to complete the research,” Dayeh continued. Based on this work, Dayehreceived funding in July from the National Science Foundation to realize a monolithically integrated GaN power converter on Si.

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The growth, device fabrication andcharacterization were performed at UC San Diego and the electron microscopy wasperformed at the Center for Integrated Nanotechnologies (CINT), aDepartment of Energy Office of Basic Science user facility that provides accessto top-of-the-line equipment under a user proposal system.